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Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Identifieur interne : 000253 ( Main/Repository ); précédent : 000252; suivant : 000254

Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Auteurs : RBID : Pascal:13-0239257

Descripteurs français

Pascal (Inist)
- Méthode MOVPE, Cellule solaire silicium, Cellule solaire, Système photovoltaïque, Fabrication industrielle, Cellule solaire multijonction, Simulation système, Phosphine, Pression partielle, Effet mémoire, Profil diffusion, Simulateur, Phosphore, Silicium, Composé III-V, Composé ternaire, Phosphure de gallium, Phosphure d'indium, GaInP.
Wicri :
- concept : Fabrication industrielle, Phosphore.

English descriptors

KwdEn :
- Diffusion profile, Gallium phosphide, III-V compound, Indium phosphide, MOVPE method, Manufacturing, Memory effect, Multijunction solar cells, Partial pressure, Phosphine, Phosphorus, Photovoltaic system, Silicon, Silicon solar cells, Simulator, Solar cell, System simulation, Ternary compound.

Abstract

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

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Pascal:13-0239257

Le document en format XML

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<author><name sortKey="Garc A Tabares, Elisa" uniqKey="Garc A Tabares E">Elisa Garc A-Tabarés</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avenida Complutense 30</s1>
<s2>28040 Madrid</s2>
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<country>Espagne</country>
<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
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<author><name sortKey="Mart N, Diego" uniqKey="Mart N D">Diego Mart N</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>CES Felipe II-Universidad Complutense de Madrid, CL Capitán 39</s1>
<s2>28300 Aranjuez, Madrid</s2>
<s3>ESP</s3>
<sZ>2 aut.</sZ>
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<placeName><region nuts="2" type="communauté">Communauté de Madrid</region>
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<orgName type="university">Université complutense de Madrid</orgName>
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<author><name sortKey="Garc A, Iv N" uniqKey="Garc A I">Iv N Garc A</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avenida Complutense 30</s1>
<s2>28040 Madrid</s2>
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<author><name sortKey="Rey Stolle, Ignacio" uniqKey="Rey Stolle I">Ignacio Rey-Stolle</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Instituto de Energía Solar, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avenida Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<title level="j" type="abbreviated">Sol. energy mater. sol. cells</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Diffusion profile</term>
<term>Gallium phosphide</term>
<term>III-V compound</term>
<term>Indium phosphide</term>
<term>MOVPE method</term>
<term>Manufacturing</term>
<term>Memory effect</term>
<term>Multijunction solar cells</term>
<term>Partial pressure</term>
<term>Phosphine</term>
<term>Phosphorus</term>
<term>Photovoltaic system</term>
<term>Silicon</term>
<term>Silicon solar cells</term>
<term>Simulator</term>
<term>Solar cell</term>
<term>System simulation</term>
<term>Ternary compound</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOVPE</term>
<term>Cellule solaire silicium</term>
<term>Cellule solaire</term>
<term>Système photovoltaïque</term>
<term>Fabrication industrielle</term>
<term>Cellule solaire multijonction</term>
<term>Simulation système</term>
<term>Phosphine</term>
<term>Pression partielle</term>
<term>Effet mémoire</term>
<term>Profil diffusion</term>
<term>Simulateur</term>
<term>Phosphore</term>
<term>Silicium</term>
<term>Composé III-V</term>
<term>Composé ternaire</term>
<term>Phosphure de gallium</term>
<term>Phosphure d'indium</term>
<term>GaInP</term>
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<front><div type="abstract" xml:lang="en">Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.</div>
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<fC01 i1="01" l="ENG"><s0>Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter. In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremIV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.</s0>
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<s2>FF</s2>
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<s2>FF</s2>
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<s5>12</s5>
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<s2>NC</s2>
<s5>22</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Phosphorus</s0>
<s2>NC</s2>
<s5>22</s5>
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<s2>NC</s2>
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<s5>26</s5>
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<s5>27</s5>
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<s5>27</s5>
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<s5>27</s5>
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<s4>INC</s4>
<s5>82</s5>
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Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Understanding phosphorus diffusion into silicon in a MOVPE environment for III-V on silicon solar cells

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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